埃瓦尔对赫塔菲分析
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Compound Semiconductor
R&D,manufacturing and service provider.
Compound Semiconductor
R&D,manufacturing and service provider.
Compound Semiconductor
R&D,manufacturing and service
Compound Semiconductor
R&D,manufacturing and service
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GaAs
Design flow environment:SAIC works closely with leading EDA tool suppliers (such as KEYSIGHT & Cadence) to develop and provide computer-aided Design(CAD). supports designers and solves any problems in circuit design.
Simulation and Model support: SAIC has the ability to provide accurate device simulation, including the design of simulated unit cell device, DC & RF measurement, Model extraction and establishment, etc.
Product testing: SAIC has ability to offer Product DC and RF characteristics test measurement ability, contains complete testing services such as probe card design, production, test program compiled, measurement, debug, and improve the yield analysis and device failure analysis etc., work together with customers to test and accelerated development and solve the lack of support.
Introduction
01
SAIC provide a complete range of applications in different fields of products on HBT process development to meet the diversity of wireless communication needs. In terms of market application, 5G products are also developed in the technical field along with the application of handheld wireless communication to the Internet of things(IoT).
Process
Applications
Features
PDK Download
H20HL
3G/4G/Wi-Fi PA, Gain Block
High Linearity and PAE
H20HR
Walkei-talkie, 2G PA
High Ruggedness, VSWR > 25:[email protected] bias
H20HG
3G/4G/Wi-Fi PA/Sub-6G/TX module,Gain Block
1. High current gain up to 120
2. High Linearity and high ruggedness;
3. 5G product application; sub-6G range
H20HV
Small Cell PA
1. High BV; BVceo of 28V and BVcbo of 55V
2. Suitable on 12V operation and small cell application
H20VC
Low Phase Noise
InGaP HBT- Low Phase Noise, Voltage Controlled Oscillator VCO
Introduction
02
SAIC provides a complete range of products in different application fields on GaAs pHEMT process development, and the application frequency covers Ka band. With product variety, to meet the diversity of market demand. 0.15μm T-gate technology uses variable shaped electron beam to achieve good wafer consistency and high productivity, and has the ability to extend to smaller line width.
Process
Applications
Features
PDK Download
P50SW
RF Switch
1. 0.5μm D-mode normal gate process
2. PiN diode for ESD protection
P25ED1
LNA/Logic/RF Switch
1. 0.5μm E-Mode & 1.0μm D-Mode pHEMT for logic
2. 0.25μm D-Mode T-gate pHEMT for PA, LNA and switch
3. NFmin < 0.65dB @6GHz
4. Power density > 900 mW/mm. (@10GHz)
5. High fT (~45 GHz) & fMax (~120 GHz)
P25ED2
LNA/Logic/RF Swith/PA
1. 0.5μm E-Mode & 1.0μm D-Mode pHEMT for logic
2. 0.25μm D-Mode T-gate pHEMT for PA, LNA and switch
3. NFmin < 0.65dB @6GHz
4. Power density > 900 mW/mm. (@10GHz)
5. High fT (~45 GHz) & fMax (~120 GHz)
P25PA1
PA/Gain Block
1. 0.25μm D-mode T-gate process with Air Bridge
2. Power density > 1,000 mW/mm. (@10GHz)
3. High fT (~58 GHz) & fMax (~160 GHz)
P25PA2
RF Switch/PA/Gain Block
1. 0.25μm D-mode T-gate process with Air Bridge
2. Power density > 1,000 mW/mm. (@10GHz)
3. High fT (~39 GHz) & fMax (~110 GHz)
P15LN
Low noise amplifier & LNB
1. 0.15μm D-mode T-gate process with Air Bridge
2. NFmin < 0.4dB, and Ga >14dB @12GHz
3. 0.5μm E/D-mode gate process for logic
P15PA
Ku/K/Ka bands power amplifier
1. 0.15μm D-mode T-gate process with Air Bridge
2. High fT (~85 GHz) & fMax (~172 GHz)
3. Power density > 700 mW/mm. (@29GHz)

P15ED
LNA/Logic/RF Swith/PA
1. 0.5μm E-Mode & 1.0μm D-Mode pHEMT for logic
2. 0.15μm D-Mode T-gate pHEMT for PA, LNA and switch
3. Power density > 600 mW/mm. (@29GHz)
4. High fT (~64 GHz) & fMax (~165 GHz)
P15EP
Low noise and medium power applications
1. 0.15μm E-mode T-gate process
2. 0.5μm E/D-mode gate process for logic
3. High Ft (~85GHz) & fMax (~155GHz)
4. High Gm (~1000mS/mm)
Introduction
03
SAIC IPD is a customization process, base material has the feature of high insulation and high impedance, so it can provide RF wtih integrated passive components required for high performance requirements, such as resistance, inductance, capacitance, etc.
Process
Applications
Features
PDK Download
IPDPI
High Q RF Passive - Filter and Matching/Bias Network
Multiple metal layers inter-connection with polyimide dielectric and integrated Resistance, capacitance, inductance circuit components
IPDAB
High Q RF Passive - Filter and Matching/Bias Network
Multiple metal layers inter-connection with air bridge structure and integrated Resistance, capacitance, inductance circuit components
Introduction
04
The design of BiHEMT is based on the concept of the silicon-based BiCMOS, but the difference lies in BiHEMT through the circuit design with the aid of epitaxial growth and the chip technology to InGaP our HBT linear power amplifier, AlGaAs pHEMT frequency switch, AlGaAs pHEMT logic control circuit, AlGaAs pHEM low noise power amplifier, passive components and internal connection integration in a single gallium arsenide chip. BiHEMT has recently become a new trend in GaAs microwave circuits due to its ability to improve chip integration, reduce chip size and reduce material and manufacturing costs.
Process
Applications
Features
PDK Download
B25ED
Wi-Fi PA/LNA/RF Switch
1. 0.25μm T-gate E-mode by e-beam writer
2. Lower NFmin of 0.4dB
3. Lower switching time and less than 250 fs
B50ED
Wi-Fi PA/LNA/RF Switch
1. 0.5μm T-gate E-mode by e-beam writer
2. Lower NFmin of 0.5dB
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