埃瓦尔对赫塔菲分析
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Compound Semiconductor
R&D,manufacturing and service provider.
Compound Semiconductor
R&D,manufacturing and service provider.
Compound Semiconductor
R&D,manufacturing and service
Compound Semiconductor
R&D,manufacturing and service
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Solutions
SAIC provides wide bandgap material semiconductor power electronic device technology such as Gallium Nitride (GaN) and Silicon Carbide (SiC),these give our costumer more choices in circuit/system design of power conversion technology. This features enable higher switching frequency, higher efficiency, and higher power density compare to Silicon MOSFETs and IGBTs. SanAn's GaN E-HEMT and SiC SBD/MOSFET technologies target serving consumer and industrial applications such as adapter/charger, telecom/server SMPS, wireless power, on board charger(OBC) with cost effective solutions.
Process
Applications
Features
650V GaN/Si
Adapter/Charger,
Telecom/server SMPS,
Wireless power,
PV Inverters,
On board Charger (OBC)
Wide device rating: 5-30A
Fail-safe: Normally-OFF
Best Figures-of-merit (FOM): RONxQG
Easy to Drive: Equivalent to Si-MOS
Improved Dynamic Performance
200V/100V GaN/Si
DC-DC for POE, EV architecture, and LED headlamp;
HD audio;
Motors Inverter;
Low Rds,on supported: 5-50mΩ Multiple package type supported, E/D Logic
650V/1200V SiC JBS
DC/AC inverter Power Factor Correction Circuit(PFC)
Switch Mode Power Supplies
Wide device rating: 2-40A
Short recovery time
Zero reverse recovery current
Temperature-independent performance
High-speed switching
SiC MOSFET
Renewable energy,HEV/EV,SMPS
Coming Soon
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